"A high-speed low side GaN e-HEMT driver with gate ringing and overshoot ..."

Jian Jin et al. (2022)

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DOI: 10.1587/ELEX.19.20220144

access: open

type: Journal Article

metadata version: 2022-09-26

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  - https://dblp.org/rec/journals/ieiceee/JinSYXZ22
Jian Jin, Mengyuan Sun, Yannan Yang, Min Xu, David Wei Zhang:
A high-speed low side GaN e-HEMT driver with gate ringing and overshoot suppression. IEICE Electron. Express 19(10): 20220144 (2022)

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