"A 13dBm 25.7% PAE 25.3-dB gain E-band power amplifier in 40nm CMOS technology."

Shangyao Huang, Xianfeng Que, Yanjie Wang (2024)

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DOI: 10.1587/ELEX.20.20230493

access: open

type: Journal Article

metadata version: 2024-10-06

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Shangyao Huang, Xianfeng Que, Yanjie Wang:
A 13dBm 25.7% PAE 25.3-dB gain E-band power amplifier in 40nm CMOS technology. IEICE Electron. Express 21(2): 20230493 (2024)

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