"SiC JFET dc characteristics under extremely high ambient temperatures."

Tsuyoshi Funaki et al. (2004)

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DOI: 10.1587/ELEX.1.523

access: open

type: Journal Article

metadata version: 2022-06-10

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  - https://dblp.org/rec/journals/ieiceee/FunakiBJKBMKH04
Tsuyoshi Funaki, Juan Carlos Balda, Jeremy Junghans, Avinash S. Kashyap, Fred D. Barlow, H. Alan Mantooth, Tsunenobu Kimoto, Takashi Hikihara:
SiC JFET dc characteristics under extremely high ambient temperatures. IEICE Electron. Express 1(17): 523-527 (2004)

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