"Erratum: The impact of trapping centers on AlGaN/GaN resonant tunneling ..."

Haoran Chen et al. (2013)

> Home

Details and statistics

DOI: 10.1587/ELEX.10.20138002

access: open

type: Journal Article

metadata version: 2021-02-12

- view
  - electronic edition via DOI (open access)
  authority control:
- export record
  dblp key:
  - journals/ieiceee/ChenYLZLH13a
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/ieiceee/ChenYLZLH13a
Haoran Chen, Lin-An Yang, Xiaoxian Liu, Zhangming Zhu, Jun Luo, Yue Hao:
Erratum: The impact of trapping centers on AlGaN/GaN resonant tunneling diode [IEICE Electronics Express Vol 10 (2013) No 19 pp 20130588]. IEICE Electron. Express 10(24): 20138002 (2013)

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.