"A 10-Transistor 65 nm SRAM Cell Tolerant to Single-Event Upsets."

Yuanqing Li et al. (2016)

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DOI: 10.1007/S10836-016-5573-5

access: closed

type: Journal Article

metadata version: 2022-10-02

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Yuanqing Li, Lixiang Li, Yuan Ma, Li Chen, Rui Liu, Haibin Wang, Qiong Wu, Michael Newton, Mo Chen:
A 10-Transistor 65 nm SRAM Cell Tolerant to Single-Event Upsets. J. Electron. Test. 32(2): 137-145 (2016)

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