"Threshold-voltage shift model based on electron tunneling under positive ..."

Piao-Rong Xu, Ruo-He Yao (2018)

> Home

Details and statistics

DOI: 10.1016/J.DISPLA.2018.04.003

access: closed

type: Journal Article

metadata version: 2018-08-27

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - journals/displays/XuY18
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/displays/XuY18
Piao-Rong Xu, Ruo-He Yao:
Threshold-voltage shift model based on electron tunneling under positive gate bias stress for amorphous InGaZnO thin-film transistors. Displays 53: 14-17 (2018)

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.