"Ferroelectrically-enhanced Schottky barrier transistors for ..."

Daniele Nazzari et al. (2024)

> Home

Details and statistics

DOI: 10.48550/ARXIV.2404.19535

access: open

type: Informal or Other Publication

metadata version: 2024-05-29

- view
  - electronic edition via DOI (open access)
  authority control:
- export record
  dblp key:
  - journals/corr/abs-2404-19535
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/corr/abs-2404-19535
Daniele Nazzari, Lukas Wind, Masiar Sistani, Dominik Mayr, Kihye Kim, Walter M. Weber:
Ferroelectrically-enhanced Schottky barrier transistors for Logic-in-Memory applications. CoRR abs/2404.19535 (2024)

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.