"Recent progress in InGaZnO FETs for high-density 2T0C DRAM applications."

Shengzhe Yan et al. (2023)

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DOI: 10.1007/S11432-023-3802-8

access: closed

type: Journal Article

metadata version: 2023-10-06

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Shengzhe Yan, Zhaori Cong, Nianduan Lu, Jinshan Yue, Qing Luo:
Recent progress in InGaZnO FETs for high-density 2T0C DRAM applications. Sci. China Inf. Sci. 66(10) (2023)

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