"Improved transport properties and mechanism in recessed-gate InAlN/GaN ..."

Siyu Liu et al. (2022)

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DOI: 10.1007/S11432-021-3359-Y

access: closed

type: Journal Article

metadata version: 2024-06-14

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  - https://dblp.org/rec/journals/chinaf/LiuMZMGLCZYH22
Siyu Liu, Xiaohua Ma, Jiejie Zhu, Minhan Mi, Jingshu Guo, Jielong Liu, Yilin Chen, Qing Zhu, Ling Yang, Yue Hao:
Improved transport properties and mechanism in recessed-gate InAlN/GaN HEMTs using a self-limited surface restoration method. Sci. China Inf. Sci. 65(10) (2022)

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