"Si nanowire FET and its modeling."

Hiroshi Iwai et al. (2011)

> Home

Details and statistics

DOI: 10.1007/S11432-011-4220-0

access: closed

type: Journal Article

metadata version: 2020-03-02

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - journals/chinaf/IwaiNSIOYOKA11
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/chinaf/IwaiNSIOYOKA11
Hiroshi Iwai, Kenji Natori, Kenji Shiraishi, Jun-ichi Iwata, Atsushi Oshiyama, Keisaku Yamada, Kenji Ohmori, Kuniyuki Kakushima, Parhat Ahmet:
Si nanowire FET and its modeling. Sci. China Inf. Sci. 54(5): 1004-1011 (2011)

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.