"2.29-kV GaN-based double-channel Schottky barrier diodes on Si substrates ..."

Ren Huang et al. (2023)

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DOI: 10.1007/S11432-022-3520-8

access: closed

type: Journal Article

metadata version: 2023-05-24

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Ren Huang, Weihang Zhang, Jincheng Zhang, Chunxu Su, Xi Liu, Liyu Fu, Yue Hao:
2.29-kV GaN-based double-channel Schottky barrier diodes on Si substrates with high VON uniformity. Sci. China Inf. Sci. 66(6) (2023)

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