"Effective gate length model for asymmetrical gate-all-around silicon ..."

Xiaoqiao Dong et al. (2020)

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DOI: 10.1007/S11432-019-2658-X

access: closed

type: Journal Article

metadata version: 2021-07-28

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Xiaoqiao Dong, Ming Li, Wanrong Zhang, Yuancheng Yang, Gong Chen, Shuang Sun, Jianing Wang, Xiaoyan Xu, Xia An:
Effective gate length model for asymmetrical gate-all-around silicon nanowire transistors. Sci. China Inf. Sci. 63(10): 1-3 (2020)

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