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"Engineering Ferroelectric HZO With n+-Si/Ge Substrates ..."
Zefu Zhao et al. (2024)
- Zefu Zhao, Yun-Wen Chen, Yu-Rui Chen, Chee Wee Liu:
Engineering Ferroelectric HZO With n+-Si/Ge Substrates Achieving High 2Pr=84 μC/cm2 and Endurance >1E11. IEEE Access 12: 71598-71605 (2024)
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