"High Electron Mobility Ge1-xSnx(x > 10%) Folding ..."

Xiao Zhai et al. (2019)

> Home

Details and statistics

DOI: 10.1109/ACCESS.2019.2937167

access: open

type: Journal Article

metadata version: 2019-10-12

- view
  - electronic edition via DOI (open access)
  authority control:
- export record
  dblp key:
  - journals/access/ZhaiSCDZ19
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/access/ZhaiSCDZ19
Xiao Zhai, Jianjun Song, Hangyu Chen, Xianying Dai, Tianlong Zhao:
High Electron Mobility Ge_1-xSn_x(x > 10%) Folding Space Charge Zone Schottky Diode for Microwave Wireless Power Transfer. IEEE Access 7: 127438-127452 (2019)

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.