"Analysis of the Influence of Silicon-on-Insulator Lateral Double-Diffused ..."

Xiaoming Yang et al. (2020)

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DOI: 10.1109/ACCESS.2020.3017052

access: open

type: Journal Article

metadata version: 2020-09-19

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Xiaoming Yang, Tianqian Li, Taiqiang Cao, Jianhong Li:
Analysis of the Influence of Silicon-on-Insulator Lateral Double-Diffused MOS Device Substrate Deep Depletion on the Transient Breakdown Voltage. IEEE Access 8: 151383-151391 (2020)

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