"An In-DRAM BIST for 16 Gb DDR4 DRAM in the 2nd 10-nm-Class DRAM Process."

Jaewon Park et al. (2021)

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DOI: 10.1109/ACCESS.2021.3061349

access: open

type: Journal Article

metadata version: 2024-02-27

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Jaewon Park, Jae Hoon Lee, Sang-Kil Park, Ki Chul Chun, Kyomin Sohn, Sungho Kang:
An In-DRAM BIST for 16 Gb DDR4 DRAM in the 2nd 10-nm-Class DRAM Process. IEEE Access 9: 33487-33497 (2021)

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