"Comprehensive Design of Device Parameters for GaN Vertical Trench MOSFETs."

Shuang Liu et al. (2020)

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DOI: 10.1109/ACCESS.2020.2977381

access: open

type: Journal Article

metadata version: 2024-10-10

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Shuang Liu, Xiufeng Song, Jincheng Zhang, Sheng-Lei Zhao, Jun Luo, Hong Zhang, Yachao Zhang, Weihang Zhang, Hong Zhou, Zhihong Liu, Yue Hao:
Comprehensive Design of Device Parameters for GaN Vertical Trench MOSFETs. IEEE Access 8: 57126-57135 (2020)

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