"Investigation of Poly Silicon Channel Variation in Vertical 3D NAND Flash ..."

Inyoung Lee et al. (2022)

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DOI: 10.1109/ACCESS.2022.3212540

access: open

type: Journal Article

metadata version: 2022-11-13

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Inyoung Lee, Dae Hwan Kim, Daewoong Kang, Il Hwan Cho:
Investigation of Poly Silicon Channel Variation in Vertical 3D NAND Flash Memory. IEEE Access 10: 108067-108074 (2022)

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