"Effect of ALD Processes on Physical and Electrical Properties of ..."

Honggyun Kim et al. (2022)

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DOI: 10.1109/ACCESS.2022.3183593

access: open

type: Journal Article

metadata version: 2024-02-05

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Honggyun Kim, Vijay D. Chavan, Jamal Aziz, Byoungsu Ko, Jae-Sung Lee, Junsuk Rho, Tukaram D. Dongale, Kyeong-Keun Choi, Deok-Kee Kim:
Effect of ALD Processes on Physical and Electrical Properties of HfO₂ Dielectrics for the Surface Passivation of a CMOS Image Sensor Application. IEEE Access 10: 68724-68730 (2022)

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