"Investigations on ..."

Jian-Hong Ke et al. (2024)

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DOI: 10.1109/ACCESS.2024.3384390

access: open

type: Journal Article

metadata version: 2024-05-04

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Jian-Hong Ke, Ching-Sung Lee, Han-Yin Liu, Jung-Hui Tsai, Wei-Chou Hsu:
Investigations on In₀.₁₂Al₀.₈₈N/AlN/AlₓGa₁-ₓN/In₀.₁₂Al₀.₈₈N MOS-HFETs With Symmetrically-Graded Wide-Gap Channel and Drain Field-Plate Design. IEEE Access 12: 50177-50183 (2024)

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