"Numerical Simulations of Gate-Granularity- Induced Subthreshold ..."

Kuo-Hsing Kao et al. (2024)

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DOI: 10.1109/ACCESS.2024.3497933

access: open

type: Journal Article

metadata version: 2024-11-30

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Kuo-Hsing Kao, Zong-Hong Wang, Yu-Chia Pai, Chen-Chi Cheng, Darsen D. Lu, Wen-Jay Lee, Nan-Yow Chen:
Numerical Simulations of Gate-Granularity- Induced Subthreshold Characteristics Deterioration of MOSFETs Magnified at Cryogenic Temperatures. IEEE Access 12: 169748-169754 (2024)

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