Stop the war!

Остановите войну!

for scientists:

default search action

combined dblp search
author search
venue search
publication search

ask others

"An Optimized Vertical GaN Parallel Split Gate Trench MOSFET Device ..."

Nilesh Kumar Jaiswal, V. N. Ramakrishnan (2023)

> Home

Details and statistics

DOI: 10.1109/ACCESS.2023.3265477

access: open

type: Journal Article

metadata version: 2023-06-15

- view
  - electronic edition via DOI (open access)
  authority control:
- export record
  dblp key:
  - journals/access/JaiswalR23
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/access/JaiswalR23
Nilesh Kumar Jaiswal, V. N. Ramakrishnan:
An Optimized Vertical GaN Parallel Split Gate Trench MOSFET Device Structure for Improved Switching Performance. IEEE Access 11: 46998-47006 (2023)

a service of

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.