"Numerical Analysis of Gate-All-Around ..."

Kamal Hosen et al. (2021)

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DOI: 10.1109/ACCESS.2021.3105341

access: open

type: Journal Article

metadata version: 2022-04-09

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Kamal Hosen, Md. Sherajul Islam, Catherine Stampfl, Jeongwon Park:
Numerical Analysis of Gate-All-Around HfO₂/TiO₂/HfO₂ High-K Dielectric Based WSe₂ NCFET With Reduced Sub-Threshold Swing and High On/Off Ratio. IEEE Access 9: 116254-116264 (2021)

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