"Novel Approach to FDSOI Threshold Voltage Model Validated at Cryogenic ..."

Hung-Chi Han et al. (2023)

> Home

Details and statistics

DOI: 10.1109/ACCESS.2023.3283298

access: open

type: Journal Article

metadata version: 2023-07-07

- view
  - electronic edition via DOI (open access)
  authority control:
- export record
  dblp key:
  - journals/access/HanZLCE23
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/access/HanZLCE23
Hung-Chi Han, Zhixing Zhao, Steffen Lehmann, Edoardo Charbon, Christian C. Enz:
Novel Approach to FDSOI Threshold Voltage Model Validated at Cryogenic Temperatures. IEEE Access 11: 56951-56957 (2023)

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.