"Strained Si Nanosheet pFET Based on SiC Strain Relaxed Buffer Layer for ..."

Kun Chen et al. (2023)

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DOI: 10.1109/ACCESS.2023.3287148

access: open

type: Journal Article

metadata version: 2023-07-21

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Kun Chen, Jingwen Yang, Chunlei Wu, Chen Wang, Min Xu, David Wei Zhang:
Strained Si Nanosheet pFET Based on SiC Strain Relaxed Buffer Layer for High Performance and Low Power Logic Applications. IEEE Access 11: 65491-65495 (2023)

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