"An Improved 4H-SiC Trench MOS Barrier Schottky Diode With Lower On-Resistance."

Fei Cao et al. (2019)

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DOI: 10.1109/ACCESS.2019.2927231

access: open

type: Journal Article

metadata version: 2021-01-21

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Fei Cao, Mengtian Bao, Xue Wu, Wen-Ju Wang, Cheng-Hao Yu, Ying Wang:
An Improved 4H-SiC Trench MOS Barrier Schottky Diode With Lower On-Resistance. IEEE Access 7: 95710-95715 (2019)

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