"Non-Destructive-Read 1T1C Ferroelectric Capacitive Memory Cell with BEOL ..."

Zuopu Zhou et al. (2023)

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DOI: 10.23919/VLSITECHNOLOGYANDCIR57934.2023.10185243

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type: Conference or Workshop Paper

metadata version: 2023-12-19

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Zuopu Zhou, Leming Jiao, Qiwen Kong, Zijie Zheng, Kaizhen Han, Yue Chen, Chen Sun, Bich-Yen Nguyen, Xiao Gong:
Non-Destructive-Read 1T1C Ferroelectric Capacitive Memory Cell with BEOL 3D Monolithically Integrated IGZO Access Transistor for 4F² High-Density Integration. VLSI Technology and Circuits 2023: 1-2

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