"Ultrathin Atomic-Layer-Deposited In2O3 Radio-Frequency Transistors with ..."

Dongqi Zheng et al. (2023)

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DOI: 10.23919/VLSITECHNOLOGYANDCIR57934.2023.10185331

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type: Conference or Workshop Paper

metadata version: 2024-10-06

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Dongqi Zheng, Adam Charnas, Jian-Yu Lin, Jackson Anderson, Dana Weinstein, Peide D. Ye:
Ultrathin Atomic-Layer-Deposited In2O3 Radio-Frequency Transistors with Record High fT of 36 GHz and BEOL Compatibility. VLSI Technology and Circuits 2023: 1-2

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