"Engineering HZO by Flat Amorphous TiN with 0.3nm Roughness Achieving ..."

Zefu Zhao et al. (2024)

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DOI: 10.1109/VLSITECHNOLOGYANDCIR46783.2024.10631450

access: closed

type: Conference or Workshop Paper

metadata version: 2024-10-17

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Zefu Zhao, Yu-Rui Chen, Yu-Tsung Liao, Yun-Wen Chen, Wan-Hsuan Hsieh, Jer-Fu Wang, Yu-An Chen, Hao-Yi Lu, Wei-Teng Hsu, Dai-Ying Lee, Ming-Hsiu Lee, C. W. Liu:
Engineering HZO by Flat Amorphous TiN with 0.3nm Roughness Achieving Uniform c-Axis Alignment, Record High Breakdown Field (~10nm HZO), and Record Final 2Pr of 56 μC/cm² with Endurance > 4E12. VLSI Technology and Circuits 2024: 1-2

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