"First Demonstration of BEOL-Compatible Atomic-Layer-Deposited InGaZnO TFTs ..."

Jie Zhang et al. (2023)

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DOI: 10.23919/VLSITECHNOLOGYANDCIR57934.2023.10185312

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type: Conference or Workshop Paper

metadata version: 2023-07-28

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Jie Zhang, Zhuocheng Zhang, Zehao Lin, Ke Xu, Hongyi Dou, Bo Yang, Xinghang Zhang, Haiyan Wang, Peide D. Ye:
First Demonstration of BEOL-Compatible Atomic-Layer-Deposited InGaZnO TFTs with 1.5 nm Channel Thickness and 60 nm Channel Length Achieving ON/OFF Ratio Exceeding 10¹¹, SS of 68 mV/dec, Normal-off Operation and High Positive Gate Bias Stability. VLSI Technology and Circuits 2023: 1-2

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