"Highly Enhanced Memory Window of 17.8V in Ferroelectric FET with IGZO ..."

Sijung Yoo et al. (2024)

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DOI: 10.1109/VLSITECHNOLOGYANDCIR46783.2024.10631534

access: closed

type: Conference or Workshop Paper

metadata version: 2024-10-17

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Sijung Yoo, Donghoon Kim, Duk-Hyun Choe, Hyun Jae Lee, Yunseong Lee, Sanghyun Jo, Yoonsang Park, Ki Hong Kim, Kyooho Jung, Moonil Jung, Kwang-Hee Lee, Jee-Eun Yang, Sangwook Kim, Seung-Geol Nam:
Highly Enhanced Memory Window of 17.8V in Ferroelectric FET with IGZO Channel via Introduction of Intermediate Oxygen-Deficient Channel and Gate Interlayer. VLSI Technology and Circuits 2024: 1-2

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