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"Lg = 60 nm In0.53 Ga0.47 As MBCFETs: From gm_max = 13.7 mS/üm and Q = ..."

J.-H. Yoo et al. (2023)

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DOI: 10.23919/VLSITECHNOLOGYANDCIR57934.2023.10185250

access: closed

type: Conference or Workshop Paper

metadata version: 2023-12-05

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  dblp key:
  - conf/vlsit/YooJLCBLJKKLKJP23
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  - https://dblp.org/rec/conf/vlsit/YooJLCBLJKKLKJP23
J.-H. Yoo, H.-B. Jo, I.-G. Lee, S.-M. Choi, J.-M. Baek, S. T. Lee, H. Jang, M. W. Kong, H. H. Kim, H. J. Lee, H.-J. Kim, H.-S. Jeong, W.-S. Park, D.-H. Ko, S. H. Shin, H.-M. Kwon, S. K. Kim, J. G. Kim, J. Yun, T. Kim, K.-Y. Shin, T.-W. Kim, J.-K. Shin, J.-H. Lee, C.-S. Shin, K.-S. Seo, Dae-Hyun Kim:
Lg = 60 nm In0.53 Ga0.47 As MBCFETs: From gm_max = 13.7 mS/üm and Q = 180 to virtual-source modeling. VLSI Technology and Circuits 2023: 1-2

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