"300 mm Wafer-scale In-situ CVD Growth Achieving 5.1×10-10 ..."

Haiwen Xu et al. (2022)

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DOI: 10.1109/VLSITECHNOLOGYANDCIR46769.2022.9830220

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type: Conference or Workshop Paper

metadata version: 2025-03-03

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Haiwen Xu, Rami Khazaka, Jishen Zhang, Zijie Zheng, Yue Chen, Xiao Gong:
300 mm Wafer-scale In-situ CVD Growth Achieving 5.1×10^-10 Ω-cm² P-Type Contact Resistivity: Record 2.5×10²¹ cm^-3 Active Doping and Demonstration on Highly-Scaled 3D Structures. VLSI Technology and Circuits 2022: 367-368

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