"Extremely Scaled Bottom Gate a-IGZO Transistors Using a Novel Patterning ..."

Chengkuan Wang et al. (2022)

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DOI: 10.1109/VLSITECHNOLOGYANDCIR46769.2022.9830393

access: closed

type: Conference or Workshop Paper

metadata version: 2023-12-19

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Chengkuan Wang, Annie Kumar, Kaizhen Han, Chen Sun, Haiwen Xu, Jishen Zhang, Yuye Kang, Qiwen Kong, Zijie Zheng, Yuxuan Wang, Xiao Gong:
Extremely Scaled Bottom Gate a-IGZO Transistors Using a Novel Patterning Technique Achieving Record High Gm of 479.5 μS/μm (VDS of 1 V) and fT of 18.3 GHz (VDS of 3 V). VLSI Technology and Circuits 2022: 294-295

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