"Novel Material, Process and Device Innovations for Next Generation Silicon ..."

Pratik B. Vyas et al. (2024)

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DOI: 10.1109/VLSITECHNOLOGYANDCIR46783.2024.10631445

access: closed

type: Conference or Workshop Paper

metadata version: 2024-10-18

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Pratik B. Vyas, Ludovico Megalini, Ashish Pal, Joshua Holt, Archana Kumar, Stephen Weeks, Charisse Zhao, Lucien Date, Hansel Lo, Michel Khoury, Safdar Muhammad, Fabian Piallat, Ricky Fang, William Charles, Pratim Palit, Jinghe Yang, Qintao Zhang, Jang Seok Oh, Bryan Turner, Samphy Hong, Aswin Prathap Pitchiya, Benjamin Briggs, Jiao Yang, Dae Yang, Fengshou Wang, Joseph Lee, Gopal Prabhu, Dustin Ho, Carlos Caballero, Durga Chaturvedula, Zheng Yuan, Yi Zheng, David A. Britz, Stephen Krause, Raghav Sreenivasan, Michael Chudzik, Subi Kengeri, Siddarth A. Krishnan, El Mehdi Bazizi:
Novel Material, Process and Device Innovations for Next Generation Silicon Carbide (SiC) Trench MOSFET Technology. VLSI Technology and Circuits 2024: 1-2

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