"Up to 57% Reduction in Effective Resistivity of Word Lines of 3D-NAND ..."

H. Terada et al. (2024)

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DOI: 10.1109/VLSITECHNOLOGYANDCIR46783.2024.10631428

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type: Conference or Workshop Paper

metadata version: 2024-10-17

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H. Terada, K. Yamaguchi, T. Yokoi, T. Sameshima, K. Suzuki, G. Nakamura, H. Nagai:
Up to 57% Reduction in Effective Resistivity of Word Lines of 3D-NAND Memory by Grain-Size Control, Material Selection, and Seam Removal. VLSI Technology and Circuits 2024: 1-2

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