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"Reliable Sub-nanosecond MRAM with Double Spin-torque Magnetic Tunnel ..."
C. Safranski et al. (2022)
- C. Safranski, Guohan Hu, J. Z. Sun, P. Hashemi, S. L. Brown, L. Buzi, C. P. D'Emic, E. R. J. Edwards, Eileen A. Galligan, M. G. Gottwald, O. Gunawan, S. Karimeddiny, H. Jung, J. Kim, Kenneth F. Latzko, Philip Louis Trouilloud, S. Zare, Daniel Christopher Worledge:
Reliable Sub-nanosecond MRAM with Double Spin-torque Magnetic Tunnel Junctions. VLSI Technology and Circuits 2022: 288-289
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