"3.7-GHz Multi-Bank High-Current Single-Port Cache SRAM with 0.5V-1.4V Wide ..."

Yoshiaki Osada et al. (2023)

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DOI: 10.23919/VLSITECHNOLOGYANDCIR57934.2023.10185289

access: closed

type: Conference or Workshop Paper

metadata version: 2023-07-28

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Yoshiaki Osada, Takaaki Nakazato, Koji Nii, Jhon-Jhy Liaw, Shien-Yang Michael Wu, Quincy Li, Hidehiro Fujiwara, Hung-Jen Liao, Tsung-Yung Jonathan Chang:
3.7-GHz Multi-Bank High-Current Single-Port Cache SRAM with 0.5V-1.4V Wide Voltage Range Operation in 3nm FinFET for HPC Applications. VLSI Technology and Circuits 2023: 1-2

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