"Highly Robust All-Oxide Transistors with Ultrathin In2O3 as Channel and ..."

Z. Lin et al. (2024)

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DOI: 10.1109/VLSITECHNOLOGYANDCIR46783.2024.10631533

access: closed

type: Conference or Workshop Paper

metadata version: 2025-03-03

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Z. Lin, Z. Zhang, C. Niu, H. Dou, K. Xu, M. Islam, J.-Y. Lin, C. Sung, M. Hong, Daewon Ha, H. Wang, M. A. Alam, P. D. Ye:
Highly Robust All-Oxide Transistors with Ultrathin In2O3 as Channel and Thick In2O3 as Metal Gate Towards Vertical Logic and Memory. VLSI Technology and Circuits 2024: 1-2

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