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"Ultra-high Tunneling Electroresistance Ratio (2 × 104) ..."
Junghyeon Hwang et al. (2023)
- Junghyeon Hwang, Chaeheon Kim, Hunbeom Shin, Hwayoung Kim, Sang-Hee Ko Park, Sanghun Jeon:
Ultra-high Tunneling Electroresistance Ratio (2 × 104) & Endurance (108) in Oxide Semiconductor-Hafnia Self-rectifying (1.5 × 103) Ferroelectric Tunnel Junction. VLSI Technology and Circuits 2023: 1-2
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