"A Nanosheet Oxide Semiconductor FET Using ALD InGaOx Channel and InSnOx ..."

Kaito Hikake et al. (2023)

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DOI: 10.23919/VLSITECHNOLOGYANDCIR57934.2023.10185234

access: closed

type: Conference or Workshop Paper

metadata version: 2023-07-28

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Kaito Hikake, Zhuo Li, Junxiang Hao, Chitra Pandy, Takuya Saraya, Toshiro Hiramoto, Takanori Takahashi, Mutsunori Uenuma, Yukiharu Uraoka, Masaharu Kobayashi:
A Nanosheet Oxide Semiconductor FET Using ALD InGaOx Channel and InSnOx Electrode with Normally-off Operation, High Mobility and Reliability for 3D Integrated Devices. VLSI Technology and Circuits 2023: 1-2

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