"Highly Scalable Vertical Bypass RRAM (VB-RRAM) for 3D V -NAND Memory."

Geonhui Han et al. (2024)

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DOI: 10.1109/VLSITECHNOLOGYANDCIR46783.2024.10631342

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type: Conference or Workshop Paper

metadata version: 2024-10-17

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Geonhui Han, Youngdong Kim, Jaeseon Kim, Dongmin Kim, Yoori Seo, Chuljun Lee, Jinmyung Choi, Jinwoo Lee, Dongho Ahn, Sechung Oh, Donghwa Lee, Hyunsang Hwang:
Highly Scalable Vertical Bypass RRAM (VB-RRAM) for 3D V -NAND Memory. VLSI Technology and Circuits 2024: 1-2

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