"Low-Damage Processed and High-Pressure Annealed High-k Hafnium Zirconium ..."

Venkateswarlu Gaddam et al. (2024)

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DOI: 10.1109/VLSITECHNOLOGYANDCIR46783.2024.10631348

access: closed

type: Conference or Workshop Paper

metadata version: 2024-10-17

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Venkateswarlu Gaddam, Junghyeon Hwang, Hunbeom Shin, Chaeheon Kim, Giuk Kim, Hyung-Jun Kim, Jooho Lee, Hyun-Cheol Kim, Bumsu Park, Suhwan Lim, Sang Yun Kim, Kwangsoo Kim, Sungho Lee, Daewon Ha, Jinho Ahn, Sanghun Jeon:
Low-Damage Processed and High-Pressure Annealed High-k Hafnium Zirconium Oxide Capacitors near Morphotropic Phase Boundary with Record-Low EOT of 2.4Å & high-k of 70 for DRAM Technology. VLSI Technology and Circuits 2024: 1-2

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