"A back-illuminated 6 μm SPAD depth sensor with PDE 36.5% at 940 nm ..."

Yutaro Fujisaki et al. (2023)

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DOI: 10.23919/VLSITECHNOLOGYANDCIR57934.2023.10185251

access: closed

type: Conference or Workshop Paper

metadata version: 2023-08-15

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Yutaro Fujisaki, Hidenobu Tsugawa, K. Sakai, H. Kumagai, R. Nakamura, Tomoharu Ogita, S. Endo, T. Iwase, H. Takase, K. Yokochi, S. Yoshida, S. Shimada, Y. Otake, T. Wakano, H. Hiyama, K. Hagiwara, M. Arakawal, S. Matsumotol, H. Maeda, K. Sugihara, K. Takabayashi, M. Ono, K. Ishibashi, K. Yamamoto:
A back-illuminated 6 μm SPAD depth sensor with PDE 36.5% at 940 nm via combination of dual diffraction structure and 2×2 on-chip lens. VLSI Technology and Circuits 2023: 1-2

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