"Hybrid Integration of 3D-RF Interconnects on AlGaN/GaN/Si HEMT RF ..."

A. Divay et al. (2024)

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DOI: 10.1109/VLSITECHNOLOGYANDCIR46783.2024.10631451

access: closed

type: Conference or Workshop Paper

metadata version: 2024-10-17

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A. Divay, O. Valorge, C. Dubarry, M. Medbouhi, R. Franiatte, D. Mermin, R. Velard, Y. Gobil, F. Morisot, Erwan Morvan, Ismael Charlet, Luca Lucci, J. Lugo, Xavier Garros:
Hybrid Integration of 3D-RF Interconnects on AlGaN/GaN/Si HEMT RF Transistor featuring 2.2W/mm Psat & 41% PAE @28GHz using a Robust and Cost-Effective Chiplet Heterogeneous Bonding Technique. VLSI Technology and Circuits 2024: 1-2

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