"First Demonstration of a-IGZO GAA Nanosheet FETs Featuring Achievable ..."

Jih-Chao Chiu et al. (2023)

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DOI: 10.23919/VLSITECHNOLOGYANDCIR57934.2023.10185385

access: closed

type: Conference or Workshop Paper

metadata version: 2023-07-28

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Jih-Chao Chiu, Eknath Sarkar, Yuan-Ming Liu, Yu-Ciao Chen, Yu-Cheng Fan, C. W. Liu:
First Demonstration of a-IGZO GAA Nanosheet FETs Featuring Achievable SS=61mV/dec, Ioff<10^-7 μA/μm, DIBL =44mV/V, Positive VT, and Process Temp. of 300 °C. VLSI Technology and Circuits 2023: 1-2

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