"First Stacked Nanosheet FeFET Featuring Memory Window of 1.8V at Record ..."

Yu-Rui Chen et al. (2023)

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DOI: 10.23919/VLSITECHNOLOGYANDCIR57934.2023.10185284

access: closed

type: Conference or Workshop Paper

metadata version: 2024-10-06

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Yu-Rui Chen, Yi-Chun Liu, Zefu Zhao, Wan-Hsuan Hsieh, Jia-Yang Lee, Chien-Te Tu, Bo-Wei Huang, Jer-Fu Wang, Shee-Jier Chueh, Yifan Xing, Guan-Hua Chen, Hung-Chun Chou, Dong Soo Woo, Min-Hung Lee, Chee Wee Liu:
First Stacked Nanosheet FeFET Featuring Memory Window of 1.8V at Record Low Write Voltage of 2V and Endurance >1E11 Cycles. VLSI Technology and Circuits 2023: 1-2

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