"Contact Cavity Shaping and Selective SiGe: B Low-Temperature Epitaxy ..."

N. Breil et al. (2023)

> Home

Details and statistics

DOI: 10.23919/VLSITECHNOLOGYANDCIR57934.2023.10185379

access: closed

type: Conference or Workshop Paper

metadata version: 2024-06-09

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - conf/vlsit/BreilLAJVNBPLGG23
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/conf/vlsit/BreilLAJVNBPLGG23
N. Breil, B.-C. Lee, J. Avila Avendano, J. Jewell, M. Vellaikal, E. Newman, E. M. Bazizi, Ashish Pal, L. Liu, Oleg Gluschenkov, A. Greene, S. Mochizuki, Nicolas Loubet, Benjamin Colombeau, Bala Haran:
Contact Cavity Shaping and Selective SiGe: B Low-Temperature Epitaxy Process Solution for sub 10^-9 Ω.cm² Contact Resistivity in Nonplanar FETs. VLSI Technology and Circuits 2023: 1-2

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.