"Leakage Reduction techniques in a 0.13um SRAM Cell."

Sergey Romanovsky et al. (2004)

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DOI: 10.1109/ICVD.2004.1260927

access: closed

type: Conference or Workshop Paper

metadata version: 2023-03-24

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Sergey Romanovsky, Arun Achyuthan, Sreedhar Natarajan, Wing Leung:
Leakage Reduction techniques in a 0.13um SRAM Cell. VLSI Design 2004: 215-221

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