"Characterization of a Novel 10T Low-Voltage SRAM Cell with High Read and ..."

Mitesh Limachia et al. (2017)

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DOI: 10.1109/VLSID.2017.5

access: closed

type: Conference or Workshop Paper

metadata version: 2023-03-24

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Mitesh Limachia, Pathik Viramgama, Rajesh Amratlal Thakker, Nikhil Kothari:
Characterization of a Novel 10T Low-Voltage SRAM Cell with High Read and Write Margin for 20nm FinFET Technology. VLSID 2017: 309-314

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